PART |
Description |
Maker |
2SK1280 |
N-Channel MOS-FET(500V, 0.5Ohm, 18A, 150W) N-Channel MOS-FET(500V 0.5Ohm 18A 150W)
|
FUJI[Fuji Electric]
|
2SJ357 D10803EJ3V0DS00 2SJ357-T1 2SJ357-T2 |
P-channel MOS FET(-30V, -3A) P-CHANNEL MOS FET FOR HIGH-SPEED SWITCH From old datasheet system
|
NEC[NEC]
|
2SK1611 |
V(dss): 800V; silicon N-channel powe F-MOS FET. For high-speed switching, for high frequency power amplification Silicon N-Channel Power F-MOS FET
|
Panasonic Semiconductor http://
|
2SK1273 2SK1273-T2 2SK1273-T1 |
N-channel power MOS FET N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING
|
NEC[NEC]
|
2SK2110 |
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING MOS Field Effect Transistor
|
NEC[NEC]
|
2SK2054 |
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING MOS Field Effect Transistor
|
NEC[NEC]
|
NP34N055IHE NP34N055HHE NP34N055HHE-AZ |
Nch MOS FET for High-speed switching SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE 34 A, 55 V, 0.019 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 MP-3, 3 PIN
|
NEC[NEC] Cypress Semiconductor, Corp.
|
SML9030-T254 SML9030T254 |
P-Channel MOS Transistor(Vdss:-50V,Id(cont):-18A,Rds(on):0.14Ω)(P沟道MOS晶体Vdss:-50V,Id(cont):-18A,Rds(on):0.14Ω))
|
Semelab(Magnatec) TT electronics Semelab Limited Seme LAB
|
2SJ518 |
Silicon P-Channel MOS FET Silicon P Channel MOS FET High Speed Power Switching
|
HITACHI[Hitachi Semiconductor]
|
IRF614B IRF614BFP001 |
250V N-Channel B-FET / Substitute of IRF614 & IRF614A 250V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
2SK2504 A5800294 |
Transistors > MOS FET > Power MOS FET Small switching (100V, 5A) From old datasheet system
|
ROHM[Rohm]
|
NP22N055IHE NP22N055HHE NP22N055HHE-AZ NP22N055 NP |
Nch MOS FET for High-speed switching MOS FIELD EFFECT TRANSISTOR 22 A, 55 V, 0.039 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 MP-3, 3 PIN
|
http:// NEC[NEC] Cypress Semiconductor, Corp.
|